Specific parameters of AMAT 0010-32695:
Size parameters: Related to the 300mm wafer process, it may include size specifications such as pedestal diameter, height, and thickness. For example, the pedestal diameter may be slightly larger than 300mm to accommodate wafer loading and process requirements, and the height may range from several tens of millimeters to several hundreds of millimeters, which is determined specifically based on its installation position and function in the equipment.
Material parameters: Considering the semiconductor process environment, it may be made of high-purity ceramics, quartz, or special metal alloys. If ceramic materials are used, they may have characteristics such as high purity, high density, and low thermal expansion coefficient to ensure stability and reliability under high-temperature and high-vacuum process conditions.
Electrical parameters: If it involves the function of an electrostatic chuck (ESC), there may be parameters such as operating voltage, current, and capacitance. For example, the operating voltage may range from tens of volts to several hundreds of volts to achieve electrostatic adsorption of wafers; the capacitance value may be within a certain range to control the strength and stability of electrostatic adsorption.
Temperature parameters: The operating temperature range may be determined according to specific process requirements and generally may range from room temperature to several hundred degrees Celsius. For example, in some heat treatment processes, it may need to withstand temperatures between 200°C and 500°C.
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